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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
KTC3229
DESCRIPTION With TO-220F package High voltage :VCEO=300V APPLICATIONS For color TV chroma output application
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER
TOR NDU ICO E SEM ANG INCH
CONDITIONS VALUE 300 Collector-base voltage Open emitter Collector-emitter voltage Open base 300 5 Emitter-base voltage Open collector Collector current 0.1 20 Ta=25ae 2 150 -55~150 Base current Collector dissipation Junction temperature Storage temperature
UNIT V V V A mA W ae ae
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=10mA; IB=1mA VCB=240V; IE=0 VEB=5V; IC=0 IC=0.5mA ; VCE=10V IC=20mA ; VCE=10V IC=20mA ; VCE=20V f=1MHz;VCB=20V 20 30 75 MIN
KTC3229
SYMBOL VCEsat ICBO IEBO hFE-1 hFE-2 fT COB
TYP.
MAX 1.0 1.0 1.0
UNIT V |I |I A A
200 MHz 4.0 pF
TOR NDU ICO E SEM ANG INCH
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
KTC3229
TOR NDU ICO E SEM ANG INCH
Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
KTC3229
TOR NDU ICO E SEM ANG INCH
4


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